POWER SEMICONDUCTOR MODULE, ELECTRIC POWER CONVERTER, AND RAILWAY VEHICLE

A power semiconductor module includes an element pair 26 formed by connecting, in anti-parallel to each other, an IGBT 25 and an FWD group 24 in which an FWD 24a, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FED 24b, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series and an element pair 36 formed by connecting, in anti-parallel to each other, an IGBT 35 and an FWD group 34 in which a FWD 34a, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FWD 34b, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series. The element pairs 26 and 36 are connected in parallel.