POWER SEMICONDUCTOR MODULE, POWER CONVERSION DEVICE, AND RAIL CAR

A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair 62 formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair 64 formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair 62 and the element pair 64 are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs 62 and 64 are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs 62 and 64 is equal to or higher than 15% and lower than 45%.