{
  "$type": "site.standard.document",
  "description": "A power semiconductor module includes an element pair 26 formed by connecting, in anti-parallel to each other, an IGBT 25 and an FWD group 24 in which an FWD 24a, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FED 24b, a voltage drop…",
  "path": "/patents/993875",
  "publishedAt": "2013-01-16T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "B60L9/22",
    "MITSUBISHI ELECTRIC CORP [JP]"
  ],
  "textContent": "A power semiconductor module includes an element pair 26 formed by connecting, in anti-parallel to each other, an IGBT 25 and an FWD group 24 in which an FWD 24a, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FED 24b, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series and an element pair 36 formed by connecting, in anti-parallel to each other, an IGBT 35 and an FWD group 34 in which a FWD 34a, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FWD 34b, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series. The element pairs 26 and 36 are connected in parallel.",
  "title": "POWER SEMICONDUCTOR MODULE, ELECTRIC POWER CONVERTER, AND RAILWAY VEHICLE"
}