SEMICONDUCTOR DEVICE

A semiconductor device has a power transistor N of vertical structure and a temperature detection element configured to detect abnormal heat generation by the power transistor N The power transistor N includes a first electrode formed on a first main surface side (front surface side) of a semiconductor substrate a second electrode formed on a second main surface side (rear surface side) of the semiconductor substrate and pads -positioned unevenly on the first electrode The temperature detection element is formed at a location of the highest heat generation by the power transistor N the location (near the pad where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads -