{
  "$type": "site.standard.document",
  "description": "A semiconductor device has a power transistor N of vertical structure and a temperature detection element configured to detect abnormal heat generation by the power transistor N The power transistor N includes a first electrode formed on a first main surface side (front surface side) of a…",
  "path": "/patents/1292552",
  "publishedAt": "2021-06-10T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01L27/0296",
    "Rohm Co., Ltd."
  ],
  "textContent": "A semiconductor device has a power transistor N of vertical structure and a temperature detection element configured to detect abnormal heat generation by the power transistor N The power transistor N includes a first electrode formed on a first main surface side (front surface side) of a semiconductor substrate a second electrode formed on a second main surface side (rear surface side) of the semiconductor substrate and pads -positioned unevenly on the first electrode The temperature detection element is formed at a location of the highest heat generation by the power transistor N the location (near the pad where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads -",
  "title": "SEMICONDUCTOR DEVICE"
}