Cu-Co-Containing Electrode and Method of Making

Herein discussed is a method of making a Cu—Co-containing electrode precursor, comprising (a) Providing a mixed-conducting membrane; (b) Depositing a dispersion on the membrane, wherein the dispersion comprises CuO particles and CoCGO particles; and (c) Sintering the CuO and CoCGO particles at a temperature of from 800° C. to 1350° C. to form the Cu—Co-containing electrode precursor. In an embodiment, the mole ratio of Cu to Co is from 3:1 to 70:1. In an embodiment, the mole ratio of Cu to Co is from 10:1 to 50:1. In an embodiment, sintering takes place at a temperature of from 1100° C. to 1250° C.