Semiconductor device and method of manufacturing the same

A semiconductor device comprises an inorganic film on a semiconductor substrate, an intermediate film on the inorganic film and containing silicon, and an organic film on the intermediate film and containing fluorine. The organic film is made of a fluorinated arylene film. The fluorinated arylene film is made of a poly(tetrafluoro-p-xylylene), or a derivative thereof, having recurring units of formula (1) wherein X is hydrogen or fluorine. The inorganic film is made of a material that is selected from the group consisting of SiO, SiN, SiC, SiOC, SiCN and SiON.