{
  "$type": "site.standard.document",
  "description": "A semiconductor device comprises an inorganic film on a semiconductor substrate, an intermediate film on the inorganic film and containing silicon, and an organic film on the intermediate film and containing fluorine. The organic film is made of a fluorinated arylene film. The fluorinated arylene…",
  "path": "/patents/1083790",
  "publishedAt": "2004-09-22T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "B60J7/062",
    "SEMICONDUCTOR LEADING EDGE TEC [JP]"
  ],
  "textContent": "A semiconductor device comprises an inorganic film on a semiconductor substrate, an intermediate film on the inorganic film and containing silicon, and an organic film on the intermediate film and containing fluorine. The organic film is made of a fluorinated arylene film. The fluorinated arylene film is made of a poly(tetrafluoro-p-xylylene), or a derivative thereof, having recurring units of formula (1) wherein X is hydrogen or fluorine. The inorganic film is made of a material that is selected from the group consisting of SiO, SiN, SiC, SiOC, SiCN and SiON.",
  "title": "Semiconductor device and method of manufacturing the same"
}