Workload-Aware Control Architecture for Semiconductor Devices

Aspects of workload-aware control architectures for semiconductor devices are disclosed. For example, a control unit receives power target values from a power consumption analyzing unit and estimated temperature gradients from a temperature analyzing unit each coupled with an element of a semiconductor device. The power consumption analyzing unit determines the power target values based on power consumption of the element and the temperature analyzing unit determines the estimated temperature gradients based on temperature in combination with a temperature history of the element. The control unit generates revised power targets and temperature targets based on the received power target values, the estimated temperature gradients, and a usage history. The usage history may include a current workload and/or a workload history of the element and may be provided by a machine-learned model or artificial intelligence. The revised power target and temperature target values are dynamically generated to optimize performance.