{
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"description": "According to one embodiment, a switching control circuit (CTL1) includes a Zener diode (D1) that, when a voltage between a drain (Dr1) and a source (Sr1) of an output transistor (T1) that controls a current flowing through a load (4) exceeds a specified value, allows continuity between the drain…",
"path": "/patents/935327",
"publishedAt": "2016-11-02T00:00:00.000Z",
"site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
"tags": [
"F02D41/20",
"RENESAS ELECTRONICS CORP [JP]"
],
"textContent": "According to one embodiment, a switching control circuit (CTL1) includes a Zener diode (D1) that, when a voltage between a drain (Dr1) and a source (Sr1) of an output transistor (T1) that controls a current flowing through a load (4) exceeds a specified value, allows continuity between the drain (Dr1) and the source (Sr1) of the output transistor (T1), and a current mirror circuit (Tr1, Tr2) that, when a current flows through the Zener diode (D1), allows continuity between the drain (Dr1) and a gate (Gt1) of the output transistor (T1).",
"title": "DYNAMIC VOLTAGE-CLAMPING CIRCUIT FOR A SEMICONDUCTOR ELEMENT"
}