DYNAMIC VOLTAGE-CLAMPING CIRCUIT FOR A SEMICONDUCTOR ELEMENT

According to one embodiment, a switching control circuit (CTL1) includes a Zener diode (D1) that, when a voltage between a drain (Dr1) and a source (Sr1) of an output transistor (T1) that controls a current flowing through a load (4) exceeds a specified value, allows continuity between the drain (Dr1) and the source (Sr1) of the output transistor (T1), and a current mirror circuit (Tr1, Tr2) that, when a current flows through the Zener diode (D1), allows continuity between the drain (Dr1) and a gate (Gt1) of the output transistor (T1).