{
  "$type": "site.standard.document",
  "description": "The present disclosure provides a semiconductor device, a manufacturing method thereof, and a power generating device. The semiconductor device includes a substrate and a thin film battery on the substrate. The thin film battery includes at least one anode structure and at least one cathode…",
  "path": "/patents/1296004",
  "publishedAt": "2021-07-22T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M10/0585",
    "BOE TECHNOLOGY GROUP CO., LTD."
  ],
  "textContent": "The present disclosure provides a semiconductor device, a manufacturing method thereof, and a power generating device. The semiconductor device includes a substrate and a thin film battery on the substrate. The thin film battery includes at least one anode structure and at least one cathode structure on the substrate, and a solid electrolyte layer spacing the at least one anode structure apart from the at least one cathode structure. Each anode structure includes an anode current collector on a surface of the substrate and an anode layer on the surface of the substrate and connected to a side surface of the anode current collector. Each cathode structure includes a cathode current collector on the surface of the substrate and a cathode layer on the surface of the substrate and connected to a side surface of the cathode current collector.",
  "title": "Semiconductor Device, Manufacturing Method Thereof, and Power Generating Device"
}