{
  "$type": "site.standard.document",
  "description": "A semiconductor device capable of charging that is less likely to cause deterioration of a power storage device is provided. The amount of a charging current is adjusted in accordance with the ambient temperature. Charging under low-temperature environments is performed with a reduced charging…",
  "path": "/patents/1297547",
  "publishedAt": "2021-08-12T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M10/443",
    "SEMICONDUCTOR ENERGY LABORATORY CO., LTD."
  ],
  "textContent": "A semiconductor device capable of charging that is less likely to cause deterioration of a power storage device is provided. The amount of a charging current is adjusted in accordance with the ambient temperature. Charging under low-temperature environments is performed with a reduced charging current. When the ambient temperature is too low or too high, the charging is stopped. Measurement of the ambient temperature is performed with a memory element using an oxide semiconductor. The use of a memory element using an oxide semiconductor enables measurement of the ambient temperature and retention of the temperature information to be performed at the same time.",
  "title": "SEMICONDUCTOR DEVICE"
}