{
  "$type": "site.standard.document",
  "description": "A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among…",
  "path": "/patents/1298046",
  "publishedAt": "2021-08-19T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M4/667",
    "COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES"
  ],
  "textContent": "A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSi. A method for manufacturing the microelectronic device is also provided.",
  "title": "ELECTRICALLY CONDUCTIVE ELEMENT"
}