{
  "$type": "site.standard.document",
  "coverImage": {
    "$type": "blob",
    "ref": {
      "$link": "bafkreib7d5j4hyba6irc7ra5lbpnkkrnbfgf4by3iueirsznruywkfn5oa"
    },
    "mimeType": "image/png",
    "size": 93810
  },
  "description": "A vertical-cavity surface-emitting laser element according to one embodiment comprises: a lower mirror; an upper mirror disposed above the lower mirror; an activated region located between the lower mirror and the upper mirror; a lower n-type cladding layer disposed between the activated region and…",
  "path": "/patents/1413918",
  "publishedAt": "2026-02-11T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "F02C7/14",
    "SEOUL VIOSYS CO LTD [KR]"
  ],
  "textContent": "A vertical-cavity surface-emitting laser element according to one embodiment comprises: a lower mirror; an upper mirror disposed above the lower mirror; an activated region located between the lower mirror and the upper mirror; a lower n-type cladding layer disposed between the activated region and the lower mirror; an upper n-type cladding layer disposed between the activated region and the upper mirror; a highly-concentrated doped p-type semiconductor layer disposed between the activated region and the upper n-type cladding layer; and a highly-concentrated doped n-type semiconductor layer disposed between the highly-concentrated doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the highly-concentrated doped p-type semiconductor layer.",
  "title": "VERTICAL-CAVITY SURFACE-EMITTING LASER ELEMENT"
}