{
  "$type": "site.standard.document",
  "description": "A method for manufacturing complex Si—C cathode base units includes the steps of: pulverizing a graphene block; mixing the plurality of graphene pieces with ethanol and first high molecular material; dispersing and pulverizing powders of silicon, and silicon oxide (SiOx) into a plurality of complex…",
  "path": "/patents/1302650",
  "publishedAt": "2021-10-21T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "C01B32/174",
    "Hong-Zheng Lai"
  ],
  "textContent": "A method for manufacturing complex Si—C cathode base units includes the steps of: pulverizing a graphene block; mixing the plurality of graphene pieces with ethanol and first high molecular material; dispersing and pulverizing powders of silicon, and silicon oxide (SiOx) into a plurality of complex monomers; and then they being mixed with high molecular graphene recipe gel solution; spraying and drying Si—C solution to form with first order Si—C nanoparticles; a plurality of buffer spaces being formed in the plurality of graphene pieces; mixing first order SIC nanoparticles, second high molecular material, and a small amount of nanometer carbon tubes and then calcined them; the first order SiC nanoparticles, the second high molecular material and the nanometer carbon tubes being shaped or being sprayed and dried; and finally, calcining them to form as third order SIC nanoparticles which is the complex Si—C based unit.",
  "title": "METHOD FOR MANUFACTURING COMPLEX SI-C CATHODE BASE UNITS AND THE BASE UNIT MADE OF THE METHOD"
}