SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR

A semiconductor device of an embodiment includes: a first trench located in a silicon carbide layer extending in a first direction; a second trench and a third trench adjacent to each other in the first direction; n type first silicon carbide region; p type second silicon carbide region on the first silicon carbide region; n type third silicon carbide region on the second silicon carbide region; p type fourth silicon carbide region between the first silicon carbide region and the second trench; p type fifth silicon carbide region between the first silicon carbide region and the third trench; p type sixth silicon carbide region shallower than the second trench between the second trench and the third trench and having a p type impurity concentration higher than that of the second silicon carbide region; a gate electrode in the first trench; a first electrode, and a second electrode.