Copper alloy film with high strength and high conductivity

A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include a Copper-Silver alloy (Cu—Ag) with between about 0.5-2 at %-Ag.