{
  "$type": "site.standard.document",
  "description": "A negative electrode material includes a silicon-based material and a carbon material. Peaks with a shift range of 1255˜1355 cmand 1575˜1600 cmin a Raman spectrum of the carbon material are a D peak and a G peak respectively. Peaks with a shift range of 1255˜1355 cmand 1575˜1600 cmin a Raman…",
  "path": "/patents/1320955",
  "publishedAt": "2022-06-23T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M4/587",
    "NINGDE AMPEREX TECHNOLOGY LIMITED"
  ],
  "textContent": "A negative electrode material includes a silicon-based material and a carbon material. Peaks with a shift range of 1255˜1355 cmand 1575˜1600 cmin a Raman spectrum of the carbon material are a D peak and a G peak respectively. Peaks with a shift range of 1255˜1355 cmand 1575˜1600 cmin a Raman spectrum of the silicon-based material are the D peak and the G peak respectively. A scattering peak intensity ratio of D versus G peaks of the carbon material is A, and a scattering peak intensity ratio of D versus G peaks of the silicon-based material is B. 0.15≤A≤0.9, 0.8≤B≤2.0, and 0.2",
  "title": "NEGATIVE ELECTRODE MATERIAL, NEGATIVE ELECTRODE PLATE, ELECTROCHEMICAL DEVICE, AND ELECTRONIC DEVICE"
}