{
  "$type": "site.standard.document",
  "description": "The inventive concepts provide a bidirectional switching converter including a first power metal oxide semiconductor field effect transistor (MOSFET) connecting an input voltage node to a switching node, a second power MOSFET connecting the switching node to a ground node, and a zero current…",
  "path": "/patents/1324760",
  "publishedAt": "2022-08-11T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H02M3/1582",
    "Samsung Electronics Co., Ltd."
  ],
  "textContent": "The inventive concepts provide a bidirectional switching converter including a first power metal oxide semiconductor field effect transistor (MOSFET) connecting an input voltage node to a switching node, a second power MOSFET connecting the switching node to a ground node, and a zero current detection (ZCD) auto-calibration circuit configured to perform one of an operation of generating a first offset for varying a turn-on time of the first power MOSFET according to an operation mode and an operation of generating a second offset for varying a turn-on time of the second power MOSFET according to the operation mode.",
  "title": "BIDIRECTIONAL SWITCHING CONVERTER AND OPERATING METHOD THEREOF"
}