{
  "$type": "site.standard.document",
  "description": "Provided is a semiconductor device including: a laminated substrate in which a circuit layer, an insulating layer, and a metal layer are sequentially laminated. A slit is formed in the circuit layer. A recess recessed from one surface side facing the insulating layer toward the other surface side…",
  "path": "/patents/1327636",
  "publishedAt": "2022-09-22T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01L23/13",
    "FUJI ELECTRIC CO., LTD."
  ],
  "textContent": "Provided is a semiconductor device including: a laminated substrate in which a circuit layer, an insulating layer, and a metal layer are sequentially laminated. A slit is formed in the circuit layer. A recess recessed from one surface side facing the insulating layer toward the other surface side is formed in the metal layer. The recess of the metal layer has a relaxation portion at least partially overlapping the slit of the circuit layer in a planar view.",
  "title": "SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, VEHICLE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE"
}