{
  "$type": "site.standard.document",
  "description": "A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face and including a first trench, a second trench having a distance of 100 nm or less from the first trench, a first silicon carbide region of n-type, a second silicon carbide region of p-type…",
  "path": "/patents/1328258",
  "publishedAt": "2022-09-29T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01L29/1045",
    "KABUSHIKI KAISHA TOSHIBA"
  ],
  "textContent": "A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face and including a first trench, a second trench having a distance of 100 nm or less from the first trench, a first silicon carbide region of n-type, a second silicon carbide region of p-type between the first trench and the second trench, a third silicon carbide region of n-type between the second silicon carbide region and the first face, a fourth silicon carbide region between the first trench and the second silicon carbide region and containing oxygen, and a fifth silicon carbide region between the second trench and the second silicon carbide region and containing oxygen; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate insulating layer; a second gate insulating layer; a first electrode; and a second electrode.",
  "title": "SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR"
}