{
  "$type": "site.standard.document",
  "description": "A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic…",
  "path": "/patents/1331137",
  "publishedAt": "2022-11-10T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "C22C9/00",
    "Apple Inc."
  ],
  "textContent": "A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include a Copper-Silver alloy (Cu—Ag) with between about 0.5-2 at %-Ag.",
  "title": "COPPER ALLOY FILM WITH HIGH STRENGTH AND HIGH CONDUCTIVITY"
}