{
  "$type": "site.standard.document",
  "description": "A semiconductor device that is of a face-down mounted chip-size package type, discharges electric charges stored in an electric storage device (battery), and has a power loss area ratio of at least 0.4 (W/mm) obtained by dividing a power loss (W) in the semiconductor device at time of the discharge…",
  "path": "/patents/1332113",
  "publishedAt": "2022-11-24T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "G01R31/389",
    "Nuvoton Technology Corporation Japan"
  ],
  "textContent": "A semiconductor device that is of a face-down mounted chip-size package type, discharges electric charges stored in an electric storage device (battery), and has a power loss area ratio of at least 0.4 (W/mm) obtained by dividing a power loss (W) in the semiconductor device at time of the discharge by an area (mm) of the semiconductor device, the semiconductor device comprising: a field-effect transistor of a horizontal type and a resistor that are connected in series in stated order between an inflow terminal and an outflow terminal; and a control circuit that causes a discharge current to be constant without depending on an applied voltage between the inflow terminal and the outflow terminal. A difference between a maximum temperature of a field-effect transistor portion and a temperature of a resistor portion is within five degrees Celsius in a discharge period.",
  "title": "SEMICONDUCTOR DEVICE"
}