{
  "$type": "site.standard.document",
  "description": "GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device…",
  "path": "/patents/1336627",
  "publishedAt": "2023-02-02T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H02J7/00",
    "Navitas Semiconductor Limited"
  ],
  "textContent": "GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.",
  "title": "PULSED LEVEL SHIFT AND INVERTER CIRCUITS FOR GAN DEVICES"
}