{
  "$type": "site.standard.document",
  "description": "Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the…",
  "path": "/patents/1341983",
  "publishedAt": "2023-04-20T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "G02B6/136",
    "Anello Photonics, Inc."
  ],
  "textContent": "Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the wet-etching steps.",
  "title": "PROCESS FLOW WITH PRE-BIASED MASK AND WET ETCHING FOR SMOOTH SIDEWALLS IN SILICON NITRIDE WAVEGUIDES"
}