{
  "$type": "site.standard.document",
  "description": "A Si diode is used as a rectifying diode on a transformer secondary side of an isolated DC/DC converter, and a high-voltage Schottky barrier diode made of a wide bandgap semiconductor is used as a free-wheeling diode arranged between a rectifier circuit and a smoothing reactor. Thus, there may be…",
  "path": "/patents/939164",
  "publishedAt": "2016-08-17T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "B60L50/52",
    "MITSUBISHI ELECTRIC CORP [JP]"
  ],
  "textContent": "A Si diode is used as a rectifying diode on a transformer secondary side of an isolated DC/DC converter, and a high-voltage Schottky barrier diode made of a wide bandgap semiconductor is used as a free-wheeling diode arranged between a rectifier circuit and a smoothing reactor. Thus, there may be provided an in-vehicle charger capable of suppressing a diode recovery surge voltage with a circuit configuration that is simpler and suppressed in cost increase as compared to a case where a related-art synchronous rectifier circuit system is employed.",
  "title": "IN-VEHICLE CHARGER"
}