{
  "$type": "site.standard.document",
  "description": "Provided is a power semiconductor module wherein stress generated at a soldering section of a relay terminal is relaxed. A power semiconductor module (1) is provided with a substrate (2), relay terminals (9, 10), external connecting terminals (13, 14), and a relay terminal holding member (6). The…",
  "path": "/patents/943071",
  "publishedAt": "2016-05-18T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "F02N11/087",
    "HITACHI AUTOMOTIVE SYSTEMS LTD [JP]"
  ],
  "textContent": "Provided is a power semiconductor module wherein stress generated at a soldering section of a relay terminal is relaxed. A power semiconductor module (1) is provided with a substrate (2), relay terminals (9, 10), external connecting terminals (13, 14), and a relay terminal holding member (6). The relay terminals (9, 10) are connected to the substrate (2) with a solder (4) therebetween. The external connecting terminals (13, 14) are bonded to the relay terminals (9, 10), respectively. The non-conductive relay terminal holding member (6) holds end portions of the relay terminals (9, 10), said end portions being on the side bonded to the solder (4).",
  "title": "POWER SEMICONDUCTOR MODULE"
}