{
  "$type": "site.standard.document",
  "description": "A semiconductor structure may be located over a substrate, and may include a parallel connection of a first component and a second component. The first component includes a series connection of a diode and a capacitor that is selected from a metal-ferroelectric-metal capacitor and a…",
  "path": "/patents/1354346",
  "publishedAt": "2023-11-09T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01L27/16",
    "Taiwan Semiconductor Manufacturing Company Limited"
  ],
  "textContent": "A semiconductor structure may be located over a substrate, and may include a parallel connection of a first component and a second component. The first component includes a series connection of a diode and a capacitor that is selected from a metal-ferroelectric-metal capacitor and a metal-antiferroelectric-metal capacitor. The second component includes a battery structure. The semiconductor structure may be used as a combination of an energy harvesting device and an energy storage structure that utilizes heat from adjacent semiconductor devices or from other heat sources.",
  "title": "ENERGY HARVEST AND STORAGE DEVICE FOR SEMICONDUCTOR CHIPS AND METHODS FOR FORMING THE SAME"
}