{
  "$type": "site.standard.document",
  "description": "An HS switching transistor is coupled between a high-side node and a switching node. An LS switching transistor is coupled between the switching node and a low-side node. An inductive load is coupled to the switching node in a way where one of the HS/LS switching transistors is freewheeling. In…",
  "path": "/patents/1354818",
  "publishedAt": "2023-11-16T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H03K17/0822",
    "STMicroelectronics S.r.l."
  ],
  "textContent": "An HS switching transistor is coupled between a high-side node and a switching node. An LS switching transistor is coupled between the switching node and a low-side node. An inductive load is coupled to the switching node in a way where one of the HS/LS switching transistors is freewheeling. In response to detection of a short circuit occurring at the switching node with the freewheeling switching transistor in the conductive state: an electrical signal at the switching node is sensed, a comparison is made between the sensed electrical signal and a threshold level, and a driving signal is provided to control freewheeling switching transistor to switch to the non-conductive state when the comparison indicates that the electrical signal has reached the threshold level.",
  "title": "PROTECTION FOR SWITCHED ELECTRONIC DEVICES"
}