SEMICONDUCTOR DEVICE

An object of the present invention is to provide a semiconductor device that prevents a gate potential of the voltage-controlled type semiconductor element 21 from decreasing when a high frequency noise is superposed A semiconductor device of the invention comprises: a voltage-controlled type semiconductor element 21 connected to a primary side of an ignition coil 13 for supplying a voltage to an ignition device of an internal combustion engine; a first resistor R1 and a second resistor R2 inserted in series in a supplying path of an input signal for controlling a gate of the voltage-controlled type semiconductor element 21; a current control circuit including a current limiting circuit 24 for controlling current flowing through the voltage-controlled type semiconductor element 21; a first by-pass forming element D1 that is connected in parallel to the second resistor R2 and by-passes the second resistor R2 in a turning ON process of the voltage-controlled type semiconductor element 21; a second by-pass forming element D2 that is connected in parallel to the first resistor R1 and the second resistor R2 and by-passes the first resistor R1 and the second resistor R2 in a turning OFF process of the voltage-controlled type semiconductor element 21; wherein the current control circuit includes an active element 23 that is connected to a node between the first resistor R1 and the second resistor R2 and pulls down a gate voltage.