{
  "$type": "site.standard.document",
  "description": "Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m/g or more. The porous oxide semiconductor particles have…",
  "path": "/patents/1356519",
  "publishedAt": "2023-12-21T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "C01G19/02",
    "KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO"
  ],
  "textContent": "Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cmor more and 1.0 g/cmor less. The oxide semiconductor is preferably SnOor SnOdoped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.",
  "title": "POROUS OXIDE SEMICONDUCTOR PARTICLES"
}