{
  "$type": "site.standard.document",
  "description": "A negative electrode material, including an oxygen-containing silicon material. In a Raman spectrum of the oxygen-containing silicon material, Irepresents a peak intensity at a corresponding peak position of 140 cm±10 cmin the Raman spectrum, Irepresents a peak intensity at a corresponding peak…",
  "path": "/patents/964865",
  "publishedAt": "2026-05-26T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M4/134",
    "Ningde Amperex Technology Limited"
  ],
  "textContent": "A negative electrode material, including an oxygen-containing silicon material. In a Raman spectrum of the oxygen-containing silicon material, Irepresents a peak intensity at a corresponding peak position of 140 cm±10 cmin the Raman spectrum, Irepresents a peak intensity at a corresponding peak position of 470 cm±10 cmin the Raman spectrum, and Irepresents a peak intensity at a corresponding peak position of 510 cm±10 cmin the Raman spectrum; and 0",
  "title": "Negative electrode material, electrode plate containing same, electrochemical device, and electronic device"
}