{
  "$type": "site.standard.document",
  "description": "A semiconductor device of an embodiment includes a silicon carbide layer including a first face parallel to a first direction, a first trench and a second trench extending in the first direction, a first gate electrode in the first trench, a second gate electrode in the second trench, an n-type…",
  "path": "/patents/965023",
  "publishedAt": "2026-05-26T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H10D62/111",
    "KABUSHIKI KAISHA TOSHIBA"
  ],
  "textContent": "A semiconductor device of an embodiment includes a silicon carbide layer including a first face parallel to a first direction, a first trench and a second trench extending in the first direction, a first gate electrode in the first trench, a second gate electrode in the second trench, an n-type first silicon carbide region, a p-type second silicon carbide region between the first silicon carbide region and the first face, an n-type third silicon carbide region between the second silicon carbide region and the first face, a p-type fourth silicon carbide region at a bottom of the first trench, and a fifth silicon carbide region at a bottom of the second trench. A width of the fourth silicon carbide region is less than a width of the first trench, and a length of the fourth silicon carbide region is more than the width of the fourth silicon carbide region.",
  "title": "Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator"
}