{
  "$type": "site.standard.document",
  "description": "Method for encapsulating a microelectronic device (102.1, 102.2), comprising the steps of: - producing the microelectronic device on a first substrate (104); - producing a portion (118.1, 118.2) of a first material impermeable to ambient atmosphere and permeable to a noble gas in a second substrate…",
  "path": "/patents/967205",
  "publishedAt": "2014-11-19T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "B81B7/02",
    "COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]"
  ],
  "textContent": "Method for encapsulating a microelectronic device (102.1, 102.2), comprising the steps of: - producing the microelectronic device on a first substrate (104); - producing a portion (118.1, 118.2) of a first material impermeable to ambient atmosphere and permeable to a noble gas in a second substrate (108) based on a second material impermeable to both ambient atmosphere and noble gas; - joining the second substrate to the first substrate, forming at least one cavity (120.1, 120.2) in which the microelectronic device is encapsulated such that said portion of the first material forms part of a wall of the cavity; - injecting noble gas into the cavity through the portion of the first material; - hermetically sealing the cavity with respect to ambient atmosphere and noble gas; the gas or gases of the ambient atmosphere being different from the noble gas.",
  "title": "Method for encapsulating a microelectronic device with the injection of a noble gas through a material permeable to this noble gas"
}