{
  "$type": "site.standard.document",
  "description": "Methods for forming a Li-containing film, islet or cluster on a substrate comprise the steps of introducing a vapor of a silicon-free lithium precursor into a reactor and depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or…",
  "path": "/patents/1361417",
  "publishedAt": "2024-03-28T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "C23C16/45553",
    "L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude"
  ],
  "textContent": "Methods for forming a Li-containing film, islet or cluster on a substrate comprise the steps of introducing a vapor of a silicon-free lithium precursor into a reactor and depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or cluster using a vapor deposition method.",
  "title": "LITHIUM PRECURSORS FOR DEPOSITION OF LITHIUM-CONTAINING LAYERS, ISLETS OR CLUSTERS"
}