{
  "$type": "site.standard.document",
  "description": "A semiconductor device (1) is described. In accordance with a first example of the invention the semiconductor device includes an electronic switch (T 1 ) that is configured to switch a load current path between a supply terminal (SUP) having a supply voltage (V S ) and an output circuit node (OUT…",
  "path": "/patents/976929",
  "publishedAt": "2014-03-26T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H02M3/156",
    "INFINEON TECHNOLOGIES AG [DE]"
  ],
  "textContent": "A semiconductor device (1) is described. In accordance with a first example of the invention the semiconductor device includes an electronic switch (T 1 ) that is configured to switch a load current path between a supply terminal (SUP) having a supply voltage (V S ) and an output circuit node (OUT 1 ) on and off in accordance with an input signal (IN 1 ). The device further includes an over-current detector (15) that is configured to compare a load current signal (S C ) that represents the load current (i L ) passing through the load current path with an over-current threshold (S TH ) and to signal (S OC ) an over-current when the load current signal reaches or exceeds the over-current threshold. Furthermore, the device includes a control unit (12) that is operable in a first and a second state of operation. The control unit is configured to set the over-current threshold to a first, higher value while in the first state of operation and to a second, lower value while in the second state of operation, and to at least temporarily switch the electronic switch off when an over-current is signalled. A change from the first state of operation to the second state of operation is caused when a first pre-defined time span has elapsed, and a change from the from the second state of operation to the first state of operation when the electronic switch is off for more than a second pre-defined time span.",
  "title": "Semiconductor device including short-circuit protection with a variable threshold"
}