{
  "$type": "site.standard.document",
  "description": "A semiconductor device is provided for measuring voltage of each of plural unit cells series-coupled in multi-stage and configuring an assembled battery. While satisfying the functional safety standards with dual-redundancy of the function of battery voltage monitoring and fault monitoring, the…",
  "path": "/patents/977969",
  "publishedAt": "2014-02-26T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "G01R31/3835",
    "RENESAS ELECTRONICS CORP [JP]"
  ],
  "textContent": "A semiconductor device is provided for measuring voltage of each of plural unit cells series-coupled in multi-stage and configuring an assembled battery. While satisfying the functional safety standards with dual-redundancy of the function of battery voltage monitoring and fault monitoring, the semiconductor device can realize the measurement of a battery voltage, the detection of overcharge/overdischarge, and the detection of disconnection between a node of unit cells and a terminal, the latter two being the function of fault monitoring, in a circuit formed on a single semiconductor substrate. The semiconductor device is provided with two terminals to be coupled to two nodes which are both electrodes of a unit cell and are coupled with other unit cells in plural unit cells configuring an assembled battery, and a voltage measurement circuit which measures the inter-terminal voltage between the two terminals. The semiconductor device is provided with a down-convert level shifter circuit which converts the inter-terminal voltage into a low-potential-side inter-terminal voltage on the basis of a ground potential, and a comparator circuit which compares the converted low-potential-side inter-terminal voltage with a predetermined reference voltage. The semiconductor device is also provided with an up-convert level shifter circuit which converts a low-potential-side shunt control signal on the basis of the ground potential into a high-potential-side shunt control signal, and a switch which short-circuits the two terminals via a resistor on the basis of the converted high-potential-side shunt control signal.",
  "title": "Semiconductor device and battery voltage monitoring device"
}