{
  "$type": "site.standard.document",
  "description": "The present invention relates to a method for controlling the density of an amorphous sulfide and, more specifically, to a method for producing an amorphous sulfide having high ionic conductivity of lithium ions by controlling the interplanar distance between a metal atom and a chalcogen atom…",
  "path": "/patents/1366395",
  "publishedAt": "2024-07-11T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "C01B17/20",
    "BEILab corp."
  ],
  "textContent": "The present invention relates to a method for controlling the density of an amorphous sulfide and, more specifically, to a method for producing an amorphous sulfide having high ionic conductivity of lithium ions by controlling the interplanar distance between a metal atom and a chalcogen atom through the adjustment of the reaction temperature and rate, in carrying out a sulfidation reaction by supplying a sulfur source in a gas phase onto the surface of a metal or an alloy.",
  "title": "METHOD FOR PRODUCING AMORPHOUS SULFIDE EXHIBITING EXCELLENT IONIC CONDUCTIVITY"
}