{
  "$type": "site.standard.document",
  "description": "[Problem] To improve productivity of guest-free silicon clathrates [Solution] A method of producing a guest-free silicon clathrate includes a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a…",
  "path": "/patents/1367258",
  "publishedAt": "2024-07-25T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M4/386",
    "TOYOTA JIDOSHA KABUSHIKI KAISHA"
  ],
  "textContent": "[Problem] To improve productivity of guest-free silicon clathrates [Solution] A method of producing a guest-free silicon clathrate includes a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a silicon clathrate compound; and a guest removing step of irradiating the silicon clathrate compound contained in a container with an electromagnetic wave to remove the guest while suctioning gas inside the container.",
  "title": "METHOD OF PRODUCING GUEST-FREE SILICON CLATHRATE, APPARATUS FOR PRODUCING GUEST-FREE SILICON CLATHRATE"
}