{
  "$type": "site.standard.document",
  "description": "The method for producing the optical semiconductor of the present invention includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the…",
  "path": "/patents/982309",
  "publishedAt": "2013-11-06T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "C01B21/0821",
    "PANASONIC CORP [JP]"
  ],
  "textContent": "The method for producing the optical semiconductor of the present invention includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mixture and a nitrogen compound gas; and a washing step of isolating niobium oxynitride from the material obtained through the nitriding step by dissolving chemical species other than niobium oxynitride with a washing liquid. The optical semiconductor of the present invention substantially consists of niobium oxynitride having a crystal structure of baddeleyite and having a composition represented by the composition formula, NbON.",
  "title": "OPTICAL SEMICONDUCTOR AND PRODUCTION METHOD THEREFOR, AS WELL AS OPTICAL SEMICONDUCTOR DEVICE, PHOTOCATALYST, HYDROGEN-GENERATING DEVICE AND ENERGY SYSTEM"
}