{
  "$type": "site.standard.document",
  "description": "According to one embodiment, a substrate includes a semiconductor layer (1). The semiconductor layer (1) comprises tungsten oxide particles (4) having a first peak in a range of 268 to 274 cm, a second peak in a range of 630 to 720 cm, and a third peak in a range of 800 to 810 cmin Raman…",
  "path": "/patents/983906",
  "publishedAt": "2013-10-02T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M10/12",
    "TOSHIBA KK [JP]"
  ],
  "textContent": "According to one embodiment, a substrate includes a semiconductor layer (1). The semiconductor layer (1) comprises tungsten oxide particles (4) having a first peak in a range of 268 to 274 cm, a second peak in a range of 630 to 720 cm, and a third peak in a range of 800 to 810 cmin Raman spectroscopic analysis. The semiconductor layer (1) has a thickness of 1 µm or more. The semiconductor layer (1) has a porosity of 20 to 80 vol%.",
  "title": "Substrate and secondary battery"
}