{
"$type": "site.standard.document",
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"description": "A semiconductor integrated circuit of the invention includes: a clock-signal generation circuit (M21); a signal processing circuit (M23) outputting an intensity signal corresponding to an intensity of an external magnetic field based on a time interval between a first spike-shaped voltage waveform…",
"path": "/patents/987850",
"publishedAt": "2013-08-07T00:00:00.000Z",
"site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
"tags": [
"G01C17/30",
"FUJIKURA CO LTD [JP]"
],
"textContent": "A semiconductor integrated circuit of the invention includes: a clock-signal generation circuit (M21); a signal processing circuit (M23) outputting an intensity signal corresponding to an intensity of an external magnetic field based on a time interval between a first spike-shaped voltage waveform and a second spike-shaped voltage waveform in accordance with a clock signal output from the clock-signal generation circuit (M21), the second spike-shaped voltage waveform being detected subsequent to the first spike-shaped voltage waveform, the second spike-shaped voltage waveform having an inverse sign to that of the first spike voltage waveform; and a clock-signal control circuit (M22) controlling intensity-signal output, which is output from the signal processing circuit, to be stopped in at least a forward outage time and a backward outage time, the forward outage time being previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period, the backward outage time being subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period.",
"title": "SEMICONDUCTOR INTEGRATED CIRCUIT, MAGNETISM DETECTION DEVICE, ELECTRONIC COMPASS, AND AMMETER"
}