{
  "$type": "site.standard.document",
  "coverImage": {
    "$type": "blob",
    "ref": {
      "$link": "bafkreiamp4oh33seh4kjpve4izs45mxsrvgi7hjxsza4q5xmvprntkttsu"
    },
    "mimeType": "image/png",
    "size": 80735
  },
  "description": "Provided is an SOFC, including a fuel electrode (20), a thin-plate-like interconnector (30) provided on the fuel electrode and formed of a conductive ceramics material, and a conductive film (70) formed on a surface of the interconnector (30) opposite to the fuel electrode (20). The conductive film…",
  "path": "/patents/988086",
  "publishedAt": "2013-07-31T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M8/0236",
    "NGK INSULATORS LTD [JP]"
  ],
  "textContent": "Provided is an SOFC, including a fuel electrode (20), a thin-plate-like interconnector (30) provided on the fuel electrode and formed of a conductive ceramics material, and a conductive film (70) formed on a surface of the interconnector (30) opposite to the fuel electrode (20). The conductive film (70) is formed of an N-type semiconductor (e.g., LaNiO). The N-type semiconductor generally has the property of exhibiting a smaller conductivity (a current hardly flows) at higher temperature. Therefore, a portion with a higher current density (thus, a portion with higher temperature) in the conductive film (70) in the vicinity of the interconnector (30) has a smaller conductivity (a current hardly flows). By virtue of this action, even though a \"fluctuation in current density of a current flowing through the interconnector (30) and an area in the vicinity thereof' occurs for some reasons, the fluctuation can be suppressed.",
  "title": "SOLID OXIDE FUEL CELL"
}