{
  "$type": "site.standard.document",
  "description": "A process for producing etched silicon-containing materials includes a first step and a second step. In the first step, silicon is deposited in the pores and on the surface of porous particles by way of thermal decomposition of silicon precursors on the porous particles, forming silicon-containing…",
  "path": "/patents/1372566",
  "publishedAt": "2025-01-09T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M4/134",
    "Wacker Chemie AG"
  ],
  "textContent": "A process for producing etched silicon-containing materials includes a first step and a second step. In the first step, silicon is deposited in the pores and on the surface of porous particles by way of thermal decomposition of silicon precursors on the porous particles, forming silicon-containing materials. In the second step, some of the deposited silicon of the silicon-containing materials is removed by etching-off.",
  "title": "PROCESS FOR PRODUCING SILICON-CONTAINING MATERIALS"
}