{
  "$type": "site.standard.document",
  "description": "The device has a lower substrate (100) including a lower electrode (102) and a dielectric layer (103). An intermediate substrate (200) made of single-crystal silicon and extending along a main plane is assembled outside an oscillating mass (210) by molecular bonding with the lower substrate, where…",
  "path": "/patents/993819",
  "publishedAt": "2013-01-16T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "B81B3/00",
    "COMMISSARIAT ENERGIE ATOMIQUE [FR]"
  ],
  "textContent": "The device has a lower substrate (100) including a lower electrode (102) and a dielectric layer (103). An intermediate substrate (200) made of single-crystal silicon and extending along a main plane is assembled outside an oscillating mass (210) by molecular bonding with the lower substrate, where the oscillating mass is opposite to a portion of the lower electrode. An upper complementary metal oxide semiconductor (CMOS) substrate (300) is joined to the intermediate substrate, where the oscillating mass is released for movement between the lower electrode and the upper substrate. An independent claim is also included for a method for making a micro-system and/or nano-system type device.",
  "title": "Method for producing a structure having a buried electrode by direct transfer"
}