{
  "$type": "site.standard.document",
  "description": "An obj ect of the present invention is to provide a method for producing a high-ductility, high-purity aluminum foil at a high film formation rate by electrolysis using a plating solution having a low chlorine concentration. A method for producing an aluminum foil of the present invention as a…",
  "path": "/patents/1002623",
  "publishedAt": "2012-05-09T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "C22C21/00",
    "HITACHI METALS LTD [JP]"
  ],
  "textContent": "An obj ect of the present invention is to provide a method for producing a high-ductility, high-purity aluminum foil at a high film formation rate by electrolysis using a plating solution having a low chlorine concentration. A method for producing an aluminum foil of the present invention as a means for achieving the object is characterized in that an aluminum film is formed on a surface of a substrate by electrolysis using a plating solution at least containing (1) a dialkyl sulfone, (2) an aluminum halide, and (3) at least one nitrogen-containing compound selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by a general formula: R 1 R 2 R 3 R 4 N·X (wherein R 1 to R 4 independently represent an alkyl group and X represents a counteranion for the quaternary ammonium cation), and then the film is removed from the substrate.",
  "title": "METHOD FOR MANUFACTURING ALUMINUM FOIL"
}