{
  "$type": "site.standard.document",
  "description": "The disclosure relates to a negative electrode material, an electrochemical device and an electronic device. The negative electrode material includes: a carbon layer; and a silicon layer located on at least part of the surface of the carbon layer. The negative electrode material satisfies the…",
  "path": "/patents/1378418",
  "publishedAt": "2026-02-05T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M4/366",
    "AESC Japan Ltd."
  ],
  "textContent": "The disclosure relates to a negative electrode material, an electrochemical device and an electronic device. The negative electrode material includes: a carbon layer; and a silicon layer located on at least part of the surface of the carbon layer. The negative electrode material satisfies the following relationship: R≤0.5, wherein R is the silicon element/carbon element distribution degree of the negative electrode material, and R satisfies the following relationship:",
  "title": "NEGATIVE ELECTRODE MATERIAL, ELECTROCHEMICAL DEVICE AND ELECTRONIC DEVICE"
}