ULTRAFAST HIGH-TEMPERATURE SINTERING METHOD

The present invention relates to a method for producing a sintered inorganic substrate, comprising providing an inorganic substrate between a first and a second carbon-comprising thermally conductive substrate, providing the first and the second thermally conductive substrate and the inorganic substrate between a third and a fourth thermally conductive substrate, heating the third and/or the fourth thermally conductive substrate at a heating rate of at least 50° C./s to a temperature between 750° C. and 1400° C., thereby heating the first and/or the second thermally conductive substrate, respectively, and sintering the inorganic substrate by heating the inorganic substrate at a temperature between 750° C. and 1400° C. with the heated first and/or second thermally conductive substrate, wherein the third and the fourth thermally conductive substrates comprise, independently from one another, one or more of a monocrystalline metal oxide and/or a monocrystalline metal nitride.