{
  "$type": "site.standard.document",
  "coverImage": {
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  "description": "The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities Q L , Q R output from the units. One of the…",
  "path": "/patents/1015384",
  "publishedAt": "2011-03-02T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "G01C3/08",
    "HAMAMATSU PHOTONICS KK [JP]"
  ],
  "textContent": "The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities Q L , Q R output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.",
  "title": "RANGE SENSOR AND RANGE IMAGE SENSOR"
}